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EU funding (€7,797,662): Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost Hor 1 May 2021 EU Research and Innovation programme "Horizon"
Overview
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Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost
YESvGaN targets a new low-cost wide band gap (WBG) power transistor technology for enabling high-efficiency power electronic systems in the field of electromobility, industrial drives, renewable energies and data centers. In many applications requiring power transistors with high voltage and current rating (600…1200V, ~100A), silicon IGBT technology is nowadays used due to cost considerations accepting its lower efficiency compared to WBG solutions. The main objective of YESvGaN is to demonstrate innovative vertical gallium nitride (GaN) power transistors fabricated on a low-cost substrate such as silicon. This so-called vertical membrane architecture combines the superior performance of GaN as WBG power transistor material with the advantages of a vertical architecture regarding current and voltage robustness at a price competitive to silicon IGBTs. To this end, the entire value chain from substrate, epitaxy, process technology, interconnection technology to application in relevant power electronic systems is addressed. YESvGaN clusters the relevant competences along the value chain in a consortium of large companies, SMEs and institutes from seven European countries.
Funded Companies:
Source: https://cordis.europa.eu/project/id/101007229
The filing refers to a past date, and does not necessarily reflect the current state.
