European Companies Search Engine
EU funding (€3,524,434): Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies Hor1 Dec 2015 EU Research and Innovation programme "Horizon"
Overview
Text
Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies
Overall objective: to enhance advanced CMOS RF and logic capability through the use of III-V heterostructure nanowires monolithically integrated on a silicon platform. INSIGHT will focus on: -Development and evaluation of the performance of silicon based, 94 GHz III-V nanowire MOSFET low-noise amplifiers. The technology opens a path for cost reduction of key mm-wave components for high bandwidth wireless applications. -Development of III-V nanowire MOSFETs on Si with breakdown voltage of 6 V, and evaluation of their performance in millimeter wave (90 GHz) power amplifier circuits. These devices will increase output power available from Si CMOS compatible mm-wave technologies with benefits for transceiver range and sensitivity. -Realisation of basic building blocks for future RF-circuits including mixers, Voltage-Controlled Oscillators, and frequency dividers for prescalers using silicon based III-V nanowire MOSFETS. -Development of science and technology for all-III-V nanowire CMOS on silicon targeting future technology nodes for 10 nm and below. This will be validated by the implementation and dynamic characterisation of a flip-flop as demonstration of the co-integration of III-V n- and p-type nanowire MOSFETs. INSIGHT is a strong consortium consisting of 7 partners with complimentary and well-documented experience in III-V MOS technology and millimeter-wave circuit design and implementation. Our main outcomes include : a)Technology toolbox including, materials, processes and integration for III-V n- and p-channel MOSFETs on a silicon platform, b) III-V nanowire MOSFET RF-transistor technology, c) Circuit design library, d) Circuit demonstrators with a clear technology path towards higher TRLs and commercialization. Our vision is to use III-V nanowire CMOS technology for millimeter-wave applications in a System-on-Chip approach, combining RF- and logic on one Si chip. Additionally, applications for logic at the 10 nm node and beyond are foreseen.
Funded Companies:
| Company name | Funding amount |
| Commissariat a L Energie Atomique et aux Energies Alternatives | €622,764 |
| FRAUNHOFER GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG e. V. | €634,724 |
| IBM RESEARCH GmbH | €0.00 |
| Lunds Universitet | €1,206,549 |
| University College Cork - National University of Ireland, Cork | €518,243 |
| University of Glasgow | €542,155 |
Source: https://cordis.europa.eu/project/id/688784
The filing refers to a past date, and does not necessarily reflect the current state.
The visualizations for "Commissariat a L Energie Atomique et aux Energies Alternatives - EU funding (€3,524,434): Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies"
are provided by
North Data
and may be reused under the terms of the
Creative Commons CC-BY license.