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EU funding (€3,524,434): Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies Hor1 Dec 2015 EU Research and Innovation programme "Horizon"

Overview

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Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies

Overall objective: to enhance advanced CMOS RF and logic capability through the use of III-V heterostructure nanowires monolithically integrated on a silicon platform. INSIGHT will focus on: -Development and evaluation of the performance of silicon based, 94 GHz III-V nanowire MOSFET low-noise amplifiers. The technology opens a path for cost reduction of key mm-wave components for high bandwidth wireless applications. -Development of III-V nanowire MOSFETs on Si with breakdown voltage of 6 V, and evaluation of their performance in millimeter wave (90 GHz) power amplifier circuits. These devices will increase output power available from Si CMOS compatible mm-wave technologies with benefits for transceiver range and sensitivity. -Realisation of basic building blocks for future RF-circuits including mixers, Voltage-Controlled Oscillators, and frequency dividers for prescalers using silicon based III-V nanowire MOSFETS. -Development of science and technology for all-III-V nanowire CMOS on silicon targeting future technology nodes for 10 nm and below. This will be validated by the implementation and dynamic characterisation of a flip-flop as demonstration of the co-integration of III-V n- and p-type nanowire MOSFETs. INSIGHT is a strong consortium consisting of 7 partners with complimentary and well-documented experience in III-V MOS technology and millimeter-wave circuit design and implementation. Our main outcomes include : a)Technology toolbox including, materials, processes and integration for III-V n- and p-channel MOSFETs on a silicon platform, b) III-V nanowire MOSFET RF-transistor technology, c) Circuit design library, d) Circuit demonstrators with a clear technology path towards higher TRLs and commercialization. Our vision is to use III-V nanowire CMOS technology for millimeter-wave applications in a System-on-Chip approach, combining RF- and logic on one Si chip. Additionally, applications for logic at the 10 nm node and beyond are foreseen.


Funded Companies:

Company name Funding amount
Commissariat a L Energie Atomique et aux Energies Alternatives €622,764
FRAUNHOFER GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG e. V. €634,724
IBM RESEARCH GmbH €0.00
Lunds Universitet €1,206,549
University College Cork - National University of Ireland, Cork €518,243
University of Glasgow €542,155

Source: https://cordis.europa.eu/project/id/688784

The filing refers to a past date, and does not necessarily reflect the current state.

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